When do we need non-quasistatic CMOS RF-models?

Abstract

This paper presents criteria for the onset of NQS effects derived from time transient device simulations and S-parameter measurements. For the first time it has been proved that e.g, a 10 /spl mu/m NMOS transistor can be described up to 27 MHz and a 0.2 /spl mu/m device up to 46 GHz by the quasistatic approach while the accuracy of the description of the inversion layer charge is still 99%.