Concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification

R. Zhan, H. Feng, Qiong Wu, X. Guan, Guang Chen, Haolu Xie, Albert Z. H. Wang
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引用次数: 3

Abstract

On-chip ESD (electrostatic discharging) protection is a challenging IC design problem New CAD tools are essential to ESD protection design prediction and verification at full chip level. This paper reports a novel concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification, which has been used to develop the first intelligent CAD tool of such kind. Design examples in 0.35μm BiCMOS are presented.
基于功能的布图级ESD保护电路设计验证中ESD关键参数的概念及提取方法
片内ESD(静电放电)保护是一个具有挑战性的IC设计问题,新的CAD工具对于全芯片水平的ESD保护设计预测和验证至关重要。本文提出了一种基于功能的布图级ESD保护电路设计验证中ESD关键参数的新概念和提取方法,并用于开发同类智能CAD工具。给出了0.35μm BiCMOS的设计实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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