The MIIS structure capacitor fabricated with high permittivity material

Abstract

The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO/sub 2/ are presented in this paper. The experimental results show that the threshold voltage of the devices (V/sub TO/) is smaller than the MOIS devices, the zinc oxide capacitor values (C/sub OX/) are higher but the total capacitor value (C/sub T/) of the device does not change.