Novel AlInN/GaN integrated circuits operating up to 500 °C

Abstract

High-temperature technology platform has been developed based on AlInN/GaN heterostructures. High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach that provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-k passivation/gate dielectrics, specifically developed for high temperature operation. The feasibility of the technology was demonstrated by fabrication and testing inverter and differential amplifier ICs using AlInN/GaN heterostructures. At temperature exceeding 500°C, the developed ICs show stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns*.