H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen
{"title":"Low phase noise millimeter-wave frequency sources using InP based HBT technology","authors":"H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen","doi":"10.1109/GAAS.1995.529008","DOIUrl":null,"url":null,"abstract":"A family of millimeter-wave sources based on InP HBT technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode VCOs, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC DRO in conjunction with a GaAs based HEMT MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBTs.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A family of millimeter-wave sources based on InP HBT technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode VCOs, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC DRO in conjunction with a GaAs based HEMT MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBTs.