{"title":"Induced dielectric modulated tunnel field effect transistor biosensor (I-DMTFET): Proposal and investigation","authors":"Sumeet Kalra, M. J. Kumar, A. Dhawan","doi":"10.1109/NANO.2017.8117329","DOIUrl":null,"url":null,"abstract":"This work introduces a novel biosensing device which utilizes the dielectric constant property of biomolecules to induce the electrostatic doping in the Dielectric Modulated Tunnel Field Effect Transistor biosensor. Using calibrated 3D TCAD simulations, the efficacy of the proposed device as a biosensor is shown. The dopant implantation-free approach results in simplified fabrication process with reduced thermal budget and hence, increased suitability to 3D integration and fabrication on glass or plastic substrates. The device is also expected to give tolerance against dopant fluctuations induced variability in the detection sensitivity.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2017.8117329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work introduces a novel biosensing device which utilizes the dielectric constant property of biomolecules to induce the electrostatic doping in the Dielectric Modulated Tunnel Field Effect Transistor biosensor. Using calibrated 3D TCAD simulations, the efficacy of the proposed device as a biosensor is shown. The dopant implantation-free approach results in simplified fabrication process with reduced thermal budget and hence, increased suitability to 3D integration and fabrication on glass or plastic substrates. The device is also expected to give tolerance against dopant fluctuations induced variability in the detection sensitivity.