A novel nonvolatile memory cell for programmable logic

Abstract

A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.