Low-Voltage, Low-Power Organic Complementary Circuits with Self-Assembled Monolayer Gate Dielectric

Abstract

Organic transistors often require minimum operating voltages of 10 V or more, since they typically use inorganic or polymeric gate insulators with a relatively small dielectric capacitance (<1 0-7 F/cm2). Lower operating voltages are desirable for certain applications, either to relax power supply requirements, to extend battery life, or to make large-area organic electronics compatible with silicon-CMOS peripheral circuitry. Recently, p-channel organic TFTs with molecular self-assembled monolayer [1] or multilayer [2] gate dielectrics have been demonstrated. With a gate dielectric capacitance approaching 10-6 F/cm2 these transistors can be operated with voltages of just a few volts. Low-voltage digital circuits with p-channel enhancement-mode loads have also been demonstrated [3]. To realize the full potential of ultra-thin gate dielectrics for truly low-power digital and analog organic circuits, we report here on the first n-channel TFTs and the first organic complementary circuits with monolayer gate dielectrics.