Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351839

R. Malladi, M. McPartlin, A. Joseph, H. Lafontaine, M. Doherty

引用次数: 2

Abstract

Large-signal compact modeling of SiGe HBTs integrated into a new IBM BICMOS technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, fT characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.

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用于功率放大器的高效率SiGe HBTs的大信号建模

描述了集成到面向高效功率放大器的新型IBM BICMOS技术中的SiGe HBTs的大信号紧凑建模。该技术在5.75 GHz AB类工作时显示出创纪录的73% PAE。开发了可扩展的HiCUM模型(大电流模型)，以准确地模拟直流，小信号和大信号特性。详细讨论了器件的直流、fT特性、输出功率、PAE和AM-PM性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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