Pentacene OTFT with parylene gate dielectric

Abstract

Organic thin film transistors (OTFT) characteristics generally depend on organic semiconductor thin film growth conditions and the gate dielectric. Authors concerned with the basic properties of pentacene OTFT, where the gate dielectric consists of three different dielectric materials: SiO2 (HMDS treated), SiO2 covered with diacetylene SAM formed by the Langmuir-Blodgett method and SiO2 covered with thin parylene layer. The highest transistor drain current value was reached for 40 nm pentacene film prepared at 30degC on parylene dielectric layer which corresponds to charge mobility 0.15 cm2 V-1 s-1 for top contact OTFT structure. The analysis of molecular microstructure of the pentacene films confirmed the quality of pentacene film prepared on parylene dielectric layer using resonance micro-Raman spectroscopy.