Multi-wavelength transceiver integration on SOI for high-performance computing system applications

T. Aalto, M. Harjanne, S. Ylinen, M. Kapulainen, T. Vehmas, M. Cherchi, C. Neumeyr, M. Ortsiefer, A. Malacarne
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引用次数: 5

Abstract

We present a vision for transceiver integration on a 3 μm SOI waveguide platform for systems scalable to Pb/s. We also present experimental results from the first building blocks developed in the EU-funded RAPIDO project. At 1.3 μm wavelength 80 Gb/s per wavelength is to be achieved using hybrid integration of III-V optoelectronics on SOI. Goals include athermal operation, low-loss I/O coupling, advanced modulation formats and packet switching. An example of the design results is an interposer chip that consists of 12 μm thick SOI waveguides locally tapered down to 3 μm to provide low-loss coupling between an optical single-mode fiber array and the 3 μm SOI chip. First example of experimental results is a 4x4 cyclic AWGs with 5 nm channel spacing, 0.4 dB/facet fiber coupling loss, 3.5 dB center-tocenter loss, and -23 dB adjacent channel crosstalk in 3.5x1.5 mm2 footprint. The second example result is a new VCSEL design that was demonstrated to have up to 40 Gb/s operation at 1.55 μm.
面向高性能计算系统应用的多波长收发器集成SOI
我们提出了一个3 μm SOI波导平台上收发器集成的愿景,用于可扩展到Pb/s的系统。我们还介绍了在欧盟资助的RAPIDO项目中开发的第一批构建模块的实验结果。在1.3 μm波长下,通过在SOI上混合集成III-V光电子器件,每个波长可实现80 Gb/s。目标包括无热操作、低损耗I/O耦合、高级调制格式和分组交换。设计结果的一个例子是一个中间芯片,该芯片由12 μm厚的SOI波导组成,局部锥形至3 μm,以提供光学单模光纤阵列与3 μm SOI芯片之间的低损耗耦合。实验结果的第一个例子是4 × 4循环awg,通道间距为5 nm,光纤耦合损耗为0.4 dB/facet,中心到中心损耗为3.5 dB,相邻通道串扰为-23 dB,占地面积为3.5x1.5 mm2。第二个示例结果是一个新的VCSEL设计,该设计在1.55 μm下具有高达40 Gb/s的运行速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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