Q/sub bd/ dependence on stress and test structure parameters: A review

Abstract

This paper gives a review of charge-to-breakdown data which has been reported in the literature for SiO/sub 2/ layers grown on single crystalline silicon. The different trends of charge-to-breakdown characteristics monitored for various stress conditions and structure designs are discussed. This work demonstrates that a good understanding of the stress method, the stress parameters and the test structures is essential for the correct interpretation of the charge-to-breakdown.