R.J. Wojnarowski, R. Fillion, B. Gorowitz, R. Saia
{"title":"Three dimensional hybrid wafer scale integration using the GE high density interconnect technology","authors":"R.J. Wojnarowski, R. Fillion, B. Gorowitz, R. Saia","doi":"10.1109/ICWSI.1993.255247","DOIUrl":null,"url":null,"abstract":"A three-dimensional multichip technology is discussed. It provides solutions to the interconnect and packaging problems associated with very high density requirements of large distributed processing systems and large solid-state memory systems. The technical approach involves an extension of the 2D multichip module (MCM) circuits fabricated with the high-density-interconnect (HDI) overlay technology. These are then stacked and interconnected with a modified version of the 2D HDI interconnect process applied to the side edges of the stack. Test structures and a stack of function circuit circuits are fabricated and tested. The features of this approach, a description of the process, and the results of tests on the demonstration vehicles are presented.<<ETX>>","PeriodicalId":377227,"journal":{"name":"1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICWSI.1993.255247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A three-dimensional multichip technology is discussed. It provides solutions to the interconnect and packaging problems associated with very high density requirements of large distributed processing systems and large solid-state memory systems. The technical approach involves an extension of the 2D multichip module (MCM) circuits fabricated with the high-density-interconnect (HDI) overlay technology. These are then stacked and interconnected with a modified version of the 2D HDI interconnect process applied to the side edges of the stack. Test structures and a stack of function circuit circuits are fabricated and tested. The features of this approach, a description of the process, and the results of tests on the demonstration vehicles are presented.<>