Accurate modeling of capacitive, resistive and inductive effects of interconnect

Ching-Chao Huang, J. Chern
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引用次数: 2

Abstract

Besides reviewing the numerical techniques in computing resistance, inductance, and capacitance, this paper addresses the challenges to accurately model the deep-submicron on-chip interconnects. Deriving regression equations from numerous runs of Poisson field solvers, one can easily transfer the accuracy of physical simulation to the rule-based full-chip layout parasitic extractors. Such methodology, which was implemented in the program Raphael, can be extended to the PCB and other package applications, and help create rules for place-and-route.
准确建模的电容,电阻和电感效应的互连
除了回顾计算电阻、电感和电容的数值技术外,本文还讨论了精确模拟深亚微米片上互连的挑战。从泊松场求解器的多次运行中推导回归方程,可以很容易地将物理模拟的准确性转移到基于规则的全芯片布局寄生提取器上。该方法已在Raphael程序中实现,可扩展到PCB和其他封装应用中,并有助于创建位置和路由规则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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