Novel gate concepts for MOS devices

Abstract

The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and "triple-plus"-gate devices such as the pi-gate and omega-gate MOSFETs.