Minimization of delay sensitivity to process induced voltage threshold variations

G. Nabaa, F. Najm
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引用次数: 13

Abstract

Threshold voltage variations, resulting from underlying process variations, cause variations in circuit delay that can affect the chip timing yield. We study design techniques and optimization strategies that minimize the effects of threshold voltage variations on circuit delay variability. Specifically, we compare different static circuits (classic CMOS, ratioed logic, and transmission gate logic) and dynamic circuits and evaluate their limitations and benefits in terms of delay variability, performance penalty and area overhead. Based on our findings, we also introduce circuit design guidelines and techniques that help mitigate the effects of threshold voltage variations. By reducing delay variability on a per-gate basis, we show how one can build threshold voltage variations-aware gate libraries for use in deep submicron design.
对过程引起的电压阈值变化的延迟敏感性最小化
由底层工艺变化引起的阈值电压变化会导致电路延迟的变化,从而影响芯片时序良率。我们研究最小化阈值电压变化对电路延迟可变性影响的设计技术和优化策略。具体来说,我们比较了不同的静态电路(经典CMOS,比率逻辑和传输门逻辑)和动态电路,并在延迟可变性,性能损失和面积开销方面评估了它们的局限性和优点。基于我们的研究结果,我们还介绍了有助于减轻阈值电压变化影响的电路设计指南和技术。通过减少每个栅极的延迟可变性,我们展示了如何构建用于深亚微米设计的阈值电压变化感知栅极库。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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