Low Distortion CATV Power Amplifier Using GaAs HJFET and GaN FET Cascode Distortion Cancellation Technique

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659236

I. Takenaka, K. Ishikura, Shinnosuke Takahashi, K. Asano, Hidemasa Takahashi, Y. Murase, Y. Ando, Takekatsu Ueki, K. Nakai, Y. Yamaguchi, Y. Kakuta

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引用次数: 2

Abstract

We have successfully developed broadband low distortion cable television (CATV) power amplifier with AlGaN/GaN hetero-structure field-effect transistor (HFET) capable of high voltage operation for high output power. To realize low distortion characteristics required for modern CATV system, we investigated low distortion cascode configuration composed of GaAs hetero-junction FET (HJFET) for first stage and GaN FET for final stage. The third-order distortion characteristics were improved by realizing distortion cancellation between GaAs HJFET and GaN FET with optimized transconductance (gm)-profile employing Volterra distortion analysis on load-line based on pulsed I-V characteristics. The developed CATV power amplifier demonstrated, to our knowledge, the lowest composite triple beat (CTB) characteristics less than -72 dBc at low drain current condition of 380 mA under 53.7 dBmV at 865 MHz, 11.7 dB tilt, 132 channels.

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采用GaAs HJFET和GaN FET级联失真消除技术的低失真有线电视功率放大器

研制成功了一种具有高电压、高输出功率的AlGaN/GaN异质结构场效应晶体管(HFET)宽带低失真有线电视(CATV)功率放大器。为了实现现代有线电视系统所需的低失真特性，我们研究了由一级GaAs异质结场效应管(HJFET)和末级GaN场效应管组成的低失真级联码结构。利用基于脉冲I-V特性的负载线Volterra畸变分析，通过优化跨导(gm)型线实现GaAs HJFET和GaN FET之间的畸变消除，改善了三阶畸变特性。据我们所知，所开发的CATV功率放大器在865 MHz、11.7 dB倾斜、132通道、53.7 dBmV、380 mA低漏电流条件下，最低复合三拍(CTB)特性小于-72 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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