Characterictics variability of gate-all-around polycrystalline silicon nanowire transistors with width of 10nm scale

Abstract

The polycrystalline silicon (poly-Si) gate-all-around (GAA) nanowire transistors with 10nm scale width were fabricated under precise width control. The nanowire width is 10nm scale. Measured characteristics show smaller threshold voltage and drain current variability than that of previously reported poly-Si nanowire transistors.