1.8 MeV proton testing of thermally stabilized GaN HEMT RF power devices in three operational modes

Abstract

We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.