A two mask complementary LDMOS module integrated in a 0.25 /spl mu/m SiGe:C BiCMOS platform

Abstract

The integration of RF n-and p-LDMOS transistors into a CMOS or BiCMOS platform allows the use of complementary circuit techniques and enables efficient solutions for linear RF power amplifiers, power switches, DC/DC converters and high voltage IO circuits. We demonstrate the modular integration of high performance n-LDMOS devices and a record p-LDMOS transistor into a low-cost 0.25 /spl mu/m SiGe:C RF-BiCMOS technology. In addition to n-LDMOS transistors on a p-substrate with breakdown voltages near 30 V, isolated n-LDMOS- and p-LDMOS transistors can be manufactured on the same wafer and achieve breakdown voltages of 11.5 V and 13.5 V and f/sub T//f/sub max/ values of 23/48 GHz or 13/30 GHz, respectively.