SOI DRAM: its features and possibility

Abstract

An SOI DRAM is a candidate for giga-bit scale DRAM with improved data retention characteristics and/or simple capacitor structure achieved by low leakage current, reduced soft error effect and low Cb/Cs ratio. The SOI DRAM is also expected to realize low-voltage memory which will be used in handy systems in a forthcoming multimedia era by reduced junction capacitance and back-gate-bias effect. However, some drawbacks are also suspected owing to floating substrate effects. In the present report, these features are summarized to demonstrate the perspective on SOI DRAM.