Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs

Abstract

This work presented an experimental study of the influence of combining the biaxial strain and 45° substrate rotation on the low-frequency noise of triple gate MuGFETs with different WFin and bias conditions. The results showed a 1/f noise characteristic for the strained and strained rotated devices in linear region, independent of WFin The strained rotated nMuGFET presents a lower LFN for narrow dimensions for practically all VGT condition, meanwhile for wider devices the opposite was found. The substrate rotation of strained MuGFETs is able to reduce the sidewall LFN.