Sachin Rahi, Vivek Raghuwanshi, Pulkit Saxena, Gargi Konwar, S. P. Tiwari
{"title":"Exploration of Promising Polymers and Polyelectrolyte in Inorganic-Organic Bi-layer Gate Dielectrics for Flexible OFETs","authors":"Sachin Rahi, Vivek Raghuwanshi, Pulkit Saxena, Gargi Konwar, S. P. Tiwari","doi":"10.1109/IFETC53656.2022.9948507","DOIUrl":null,"url":null,"abstract":"Promising polyelectrolyte and polymer dielectrics such as PAA, P(VDF-TrFE), or PVP-Co-PMMA are investigated as one of the layers in inorganic high-k/organic bilayer gate dielectric for demonstration of high performance flexible organic field-effect transistors (OFETs). High-k HfO2 was chosen as inorganic gate dielectric in the bilayer combination. The devices with PAA dielectric exhibited better performance compared to other counterparts due to formation of electric double layer, with TIPS-Pentacene as semiconductor. These OFETs exhibited high field-effect mobility (μ) values of ~1.4 cm2 V-1 s-1 in the saturation regime with Ion/Ioff of ~104 for operating voltage of -10V, along with high cyclic stability.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC53656.2022.9948507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Promising polyelectrolyte and polymer dielectrics such as PAA, P(VDF-TrFE), or PVP-Co-PMMA are investigated as one of the layers in inorganic high-k/organic bilayer gate dielectric for demonstration of high performance flexible organic field-effect transistors (OFETs). High-k HfO2 was chosen as inorganic gate dielectric in the bilayer combination. The devices with PAA dielectric exhibited better performance compared to other counterparts due to formation of electric double layer, with TIPS-Pentacene as semiconductor. These OFETs exhibited high field-effect mobility (μ) values of ~1.4 cm2 V-1 s-1 in the saturation regime with Ion/Ioff of ~104 for operating voltage of -10V, along with high cyclic stability.