A 286 mm/sup 2/ 256 Mb DRAM with X32 both-ends DQ

Y. Watanabe, H. Wong, T. Kirihata, D. Kato, J. DeBrosse, T. Hara, M. Yoshida, H. Mukai, K. Quader, T. Nagai, P. Poechmueller, K. Pfefferl, M. Wordeman, S. Fujii
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引用次数: 1

Abstract

The growing market for high performance PCs has created a demand for a new generation of DRAMs with wide bit organization. A wider I/O DRAM is necessary to provide a sufficiently small granularity for the memory system. Hierarchical data-line architectures which transfer many bits over the memory array could potentially be used to provide a wide I/O. However, even using these schemes, chip size must expand to accommodate additional devices and wiring as the I/O width increases. This paper describes a chip architecture which minimizes the die size of wide I/O DRAMs and its application to a 256 Mb DRAM with X32 organization.
286mm /sup 2/ 256mb DRAM,两端DQ为X32
高性能个人电脑市场的不断增长已经产生了对新一代宽位组织的dram的需求。为了给内存系统提供足够小的粒度,需要更宽的I/O DRAM。在存储器阵列上传输许多位的分层数据线体系结构可以潜在地用于提供宽I/O。然而,即使使用这些方案,芯片尺寸也必须随着I/O宽度的增加而扩展,以容纳额外的设备和布线。本文介绍了一种最小化宽I/O DRAM芯片尺寸的芯片结构,并将其应用于X32结构的256mb DRAM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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