Design and simulation single stage CMOS TIA for 1.4 GHz,-27 dB MEMS SAW resonator

N. Kamarudin, J. Karim
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引用次数: 3

Abstract

This paper present the design and simulation of low power transimpedance amplifier (TIA) for MEMS SAW resonator. The amplifier should consume low power to compensate the large resonator losses. The design was realized by using Silterra 0.18μm CMOS process. The designed amplifier produced 26.69 dBΩ gain at frequency 1.4 GHz. and consume 2.6 mW power with supply voltage, VDD 1.8 V. When integrate with MEMS SAW resonator, the system made 125.3 dB/Hz@ 1 kHz cut off frequency.
1.4 GHz -27 dB MEMS SAW谐振器单级CMOS TIA设计与仿真
介绍了用于MEMS SAW谐振器的低功率跨阻放大器(TIA)的设计与仿真。放大器应消耗低功率以补偿谐振器的大损耗。该设计采用Silterra 0.18μm CMOS工艺实现。所设计的放大器在1.4 GHz频率下产生26.69 dBΩ增益。电源电压为2.6 mW, VDD为1.8 V。当与MEMS SAW谐振器集成时,系统的截止频率为125.3 dB/Hz@ 1 kHz。
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