{"title":"Design and simulation single stage CMOS TIA for 1.4 GHz,-27 dB MEMS SAW resonator","authors":"N. Kamarudin, J. Karim","doi":"10.1109/RSM.2017.8069162","DOIUrl":null,"url":null,"abstract":"This paper present the design and simulation of low power transimpedance amplifier (TIA) for MEMS SAW resonator. The amplifier should consume low power to compensate the large resonator losses. The design was realized by using Silterra 0.18μm CMOS process. The designed amplifier produced 26.69 dBΩ gain at frequency 1.4 GHz. and consume 2.6 mW power with supply voltage, VDD 1.8 V. When integrate with MEMS SAW resonator, the system made 125.3 dB/Hz@ 1 kHz cut off frequency.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2017.8069162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper present the design and simulation of low power transimpedance amplifier (TIA) for MEMS SAW resonator. The amplifier should consume low power to compensate the large resonator losses. The design was realized by using Silterra 0.18μm CMOS process. The designed amplifier produced 26.69 dBΩ gain at frequency 1.4 GHz. and consume 2.6 mW power with supply voltage, VDD 1.8 V. When integrate with MEMS SAW resonator, the system made 125.3 dB/Hz@ 1 kHz cut off frequency.