{"title":"Delta-Sigma modulated output temperature sensor for 1V voltage supply","authors":"J. Ramírez, Joao P. Tiol, Diego Deotti, F. Fruett","doi":"10.1109/LASCAS.2019.8667536","DOIUrl":null,"url":null,"abstract":"This work presents a temperature sensor with a digital Delta-Sigma modulated output designed to work at a supply voltage as low as 1V to operate in a temperature range from −20°C to +125°C. A bandgap current reference circuit generates a current proportional to the temperature (PTAT) and a reference current. Both currents are integrated in a capacitor within a Delta-Sigma modulator, resulting in a digital output whose average value is proportional to the temperature. The sensor was designed using the 180nm TSMC technology and occupies an area of 285µm×190µm. Simulations showed a maximum nonlin-earity of 0.31% and a duty cycle variation of 0.531% per Cel-sius. The sensor power consumption is 120µW.","PeriodicalId":142430,"journal":{"name":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2019.8667536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This work presents a temperature sensor with a digital Delta-Sigma modulated output designed to work at a supply voltage as low as 1V to operate in a temperature range from −20°C to +125°C. A bandgap current reference circuit generates a current proportional to the temperature (PTAT) and a reference current. Both currents are integrated in a capacitor within a Delta-Sigma modulator, resulting in a digital output whose average value is proportional to the temperature. The sensor was designed using the 180nm TSMC technology and occupies an area of 285µm×190µm. Simulations showed a maximum nonlin-earity of 0.31% and a duty cycle variation of 0.531% per Cel-sius. The sensor power consumption is 120µW.