A 1.17 GHz wideband MEMS filter using higher order SH0 lithium niobate resonators

Yong-Ha Song, S. Gong
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Abstract

This paper reports on the design, analysis, and demonstration of a lithium niobate (LiNbO3) wideband radio frequency (RF) microelectromechanical systems (MEMS) filter with a low insertion loss of 2.1 dB, a wide bandwidth of 4.9 %, and a spurious-free passband response at 1.17 GHz. Such high performance is achieved by arraying resonators designed with pronounced 3rd order shear horizontal (SH0) mode resonances. The 3rd order SH0 mode was selected to attain a 3× higher resonant frequency, and subsequently enable a filter center frequency beyond 1 GHz without resorting to costly fine-resolution lithography. To suppress the unwanted modes while maintaining a large electromechanical coupling (kt2), and a large fractional bandwidth, the ratio of the electrode pitch (Wp) to the total width of the resonator (W) has been optimized using finite element analyses.
采用高阶SH0铌酸锂谐振器的1.17 GHz宽带MEMS滤波器
本文报道了铌酸锂(LiNbO3)宽带射频(RF)微机电系统(MEMS)滤波器的设计、分析和演示,该滤波器的插入损耗低至2.1 dB,带宽为4.9%,通带响应为1.17 GHz,无杂散。这种高性能是通过设计具有明显的三阶剪切水平(SH0)模式共振的阵列谐振器实现的。选择三阶SH0模式可以获得3倍高的谐振频率,从而使滤波器中心频率超过1 GHz,而无需采用昂贵的精细分辨率光刻技术。为了抑制不需要的模式,同时保持大的机电耦合(kt2)和大的分数带宽,使用有限元分析优化了电极间距(Wp)与谐振器总宽度(W)的比率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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