A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency

Abstract

The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.