A Low-Voltage Sub-ns Pulse Integrated CMOS Laser Diode Driver for SPAD-based Time-of-Flight Rangefinding in Mobile Applications

2019 32nd IEEE International System-on-Chip Conference (SOCC) Pub Date : 2019-09-01 DOI:10.1109/SOCC46988.2019.1570548090

Samuel Rigault, N. Moeneclaey, L. Labrak, I. O’Connor

{"title":"A Low-Voltage Sub-ns Pulse Integrated CMOS Laser Diode Driver for SPAD-based Time-of-Flight Rangefinding in Mobile Applications","authors":"Samuel Rigault, N. Moeneclaey, L. Labrak, I. O’Connor","doi":"10.1109/SOCC46988.2019.1570548090","DOIUrl":null,"url":null,"abstract":"A fully integrated laser diode driver being currently manufactured in 40nm CMOS technology is presented. It is dedicated for fast sub-ns laser pulses generation with the aim of improving accuracy and resolution of SPAD-based time-of-flight (TOF) rangefinder in mobile devices. The proposed driver circuit is based on capacitive charge transfer. Its specific features are a voltage doubler design for increase laser power at low input voltage (<3V), as well as a reverse bias voltage scheme to address typical laser diode slow turn-off transient (optical tail). Simulation results based on electro-optical laser diode model and post-layout extraction shows that, for a 2.5V supply voltage, the driver can produce a typical 460ps laser drive current pulse up to 230mA. With these settings, a 208ps laser pulse with a 238mW peak power is generated. In addition, the current pulse width can be configured down to 375ps to generate sub-100ps laser pulses. The power consumption of the proposed driver circuit is 113mW at 200MHz repetition rate.","PeriodicalId":253998,"journal":{"name":"2019 32nd IEEE International System-on-Chip Conference (SOCC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 32nd IEEE International System-on-Chip Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC46988.2019.1570548090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

A fully integrated laser diode driver being currently manufactured in 40nm CMOS technology is presented. It is dedicated for fast sub-ns laser pulses generation with the aim of improving accuracy and resolution of SPAD-based time-of-flight (TOF) rangefinder in mobile devices. The proposed driver circuit is based on capacitive charge transfer. Its specific features are a voltage doubler design for increase laser power at low input voltage (<3V), as well as a reverse bias voltage scheme to address typical laser diode slow turn-off transient (optical tail). Simulation results based on electro-optical laser diode model and post-layout extraction shows that, for a 2.5V supply voltage, the driver can produce a typical 460ps laser drive current pulse up to 230mA. With these settings, a 208ps laser pulse with a 238mW peak power is generated. In addition, the current pulse width can be configured down to 375ps to generate sub-100ps laser pulses. The power consumption of the proposed driver circuit is 113mW at 200MHz repetition rate.

查看原文本刊更多论文

一种低压亚ns脉冲集成CMOS激光二极管驱动器，用于基于spad的移动应用中的飞行时间测距

介绍了目前采用40nm CMOS技术制造的一种完全集成的激光二极管驱动器。它专门用于快速产生亚秒级激光脉冲，旨在提高移动设备中基于spad的飞行时间(TOF)测距仪的精度和分辨率。所提出的驱动电路是基于电容电荷转移的。其具体特点是电压倍频设计，用于在低输入电压(<3V)下增加激光功率，以及反向偏置电压方案，以解决典型的激光二极管慢关断瞬态(光尾)。基于电光激光二极管模型和后布置图提取的仿真结果表明，在2.5V电源电压下，驱动器可产生典型的460ps激光驱动电流脉冲，最大输出功率为230mA。在这些设置下，产生208ps的激光脉冲，峰值功率为238mW。此外，电流脉宽可以配置到375ps，以产生低于100ps的激光脉冲。所提出的驱动电路在200MHz重复频率下的功耗为113mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 32nd IEEE International System-on-Chip Conference (SOCC)

自引率

0.00%

发文量