Spatially non-uniform field response in arrays of silicon quantum dots: DFT computation

Andrei Kryjevski, D. Kilin, S. Kilina
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引用次数: 0

Abstract

We use Density Functional Theory (DFT) combined with the many body perturbation theory to calculate spatially non-uniform field response in several hydrogen-passivated silicon nanosystems, such as Si29H36 quantum dots (QDs) with crystalline and amorphous structures, the quasi-one dimensional (1-D) arrays constructed from these QDs. We model response to a spatially non uniform time dependent electric field that vanishes on every other QD. Current density induced by such electric field configurations serves as a characteristic of QD coupling in the arrays and, in particular, of the inter QD exciton transport. We observe rapid decay of the QD-QD coupling with the increase of inter QD separation and its complete diminishing at the QD-QD distance comparable with the size of the QD.
硅量子点阵列的空间非均匀场响应:DFT计算
本文利用密度泛函理论(DFT)结合多体微扰理论计算了几种氢钝化硅纳米体系的空间非均匀场响应,如具有晶体和非晶结构的Si29H36量子点(QDs),以及由这些量子点构建的准一维(1-D)阵列。我们模拟了对空间非均匀时间相关电场的响应,该电场在每个其他量子点上消失。由这种电场结构引起的电流密度是阵列中量子点耦合的特征,特别是量子点间激子输运的特征。我们观察到QD-QD耦合随着QD间分离的增加而快速衰减,并在与QD大小相当的QD-QD距离处完全衰减。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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