Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry

Abstract

For systematic investigation of growth of the Ti-rich interface layers in the annealed Cu(Ti)/dielectric-layer, the RBS technique was employed. Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be an appropriate method for the growth analysis of the Ti-rich interface layers.