Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553048

Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang

引用次数: 0

Abstract

The authors have investigated the resistance switching characteristics of non-stoichiometric ZrO_x and STO_x thin films for nonvolatile memory application. The non-stoichiometric ZrO_x films were grown in a reactive sputtering method using Zr target and SrTiO_x (STO_x) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO₃ target

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非易失性存储器应用的非化学计量ZrO/sub x/和SrTiO/sub x/的可逆电阻开关

研究了用于非易失性存储器的非化学计量ZrOx和STOx薄膜的电阻开关特性。以Zr为靶材，采用反应溅射法制备了非化学计量ZrOx薄膜;以SrTiO3为靶材，采用脉冲激光沉积(PLD)法制备了SrTiOx (STOx)薄膜

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

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