Fine-Grained Voltage Boosting for Improving Yield in Near-Threshold Many-Core Processors

J. Kong, Arslan Munir, F. Koushanfar
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引用次数: 3

Abstract

Process variation is a major impediment in optimizing yield, energy, and performance in near-threshold many-core processors. In this paper, we present a comprehensive analysis on yield losses in near-threshold many-core processors. Based on our analysis, we propose energy-efficient yield improvement techniques for near-threshold many-core processors: SRAM cell arrays and Wordline driver voltage Boosting (SWBoost) and Cache voltage Boosting (CBoost). Results reveal that SWBoost and CBoost improve a chip yield by up to 66% and 83%, respectively. Furthermore, runtime energy overheads of SWBoost and CBoost are only 0.46% and 0.54%, respectively, which are much lower than conventional voltage boosting techniques.
提高近阈值多核处理器成品率的细粒度电压增强
在近阈值多核处理器中,工艺变化是优化产量、能量和性能的主要障碍。在本文中,我们对近阈值多核处理器的良率损失进行了全面分析。基于我们的分析,我们提出了近阈值多核处理器的节能成品率提高技术:SRAM单元阵列和Wordline驱动电压提升(SWBoost)和缓存电压提升(CBoost)。结果表明,SWBoost和CBoost分别将芯片产量提高了66%和83%。此外,SWBoost和CBoost的运行时能量开销分别仅为0.46%和0.54%,远低于传统的电压提升技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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