BiCMOS high-performance ICs: From DC to mm-wave

A. Smolders, H. Gul, E. V. D. Heijden, Patrice Gamand, M. Geurts
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引用次数: 8

Abstract

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
BiCMOS高性能集成电路:从直流到毫米波
在过去几年中,基于硅和硅锗(SiGe)的BiCMOS技术取得了令人印象深刻的进展。这使得传统的微波和新兴的毫米波应用能够在硅中实现。本文概述了几种采用最先进的BiCMOS技术(QUBiC4)实现的高性能集成电路。介绍了高性能ic的示例,从用于移动应用的基本构建块到用于毫米波范围内应用的高度集成的接收器和发射器ic。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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