Design of a wideband CMOS LNA for low frequency band SKA application

Eman O. Farhat, K. Adami, O. Casha, I. Grech, J. B. D. Vaate
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引用次数: 2

Abstract

This paper presents the design of a wideband (50-350 MHz) low noise amplifier (LNA), employing a bandwidth constrained noise figure optimization technique targeted for a low frequency band Square Kilometer Array radio telescope. In this application, noise figure and power consumption optimization is crucial. In fact, the LNA optimization and analysis considers the effect of the induced gate noise in the MOS devices. The LNA is designed in a standard 0.18 μm CMOS process and provides a forward gain higher than 30 dB across the whole bandwidth, with a noise figure of less than 0.65 dB while consuming 72 mW from a 1.5 V supply.
用于低频SKA应用的宽带CMOS LNA设计
本文针对低频平方公里阵列射电望远镜,采用带宽约束噪声系数优化技术,设计了一种宽带(50-350 MHz)低噪声放大器。在这种应用中,噪声系数和功耗优化是至关重要的。事实上,LNA优化和分析考虑了MOS器件中感应栅噪声的影响。该LNA采用标准的0.18 μm CMOS工艺设计,在整个带宽范围内提供高于30 dB的正向增益,噪声系数低于0.65 dB,同时在1.5 V电源下消耗72 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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