Research and Design of 1700V 250A SiC MOSFET Driver

Wujun Yao, Niu Libo, Wang Dongwen, Sun Pengyun
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Abstract

In this paper, RoHM BSM250D17P2E004 as the driving object, the driver and protection circuit of 1700V and 250A SiC MOSFET are studied and designed. The minimum pulse width suppression and anti-crosstalk drive circuit, desaturation detection and active clamp protection circuit of SiC MOSFET are studied emphatically. The reliability of the driving circuit and the validity of the protection circuit are verified by experiments.
1700V 250A SiC MOSFET驱动器的研究与设计
本文以RoHM BSM250D17P2E004为驱动对象,对1700V和250A SiC MOSFET的驱动和保护电路进行了研究和设计。重点研究了SiC MOSFET的最小脉宽抑制和串扰驱动电路、去饱和检测和有源箝位保护电路。通过实验验证了驱动电路的可靠性和保护电路的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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