Enhanced hot-carrier degradation due to water in TEOS/O/sub 3/-oxide and water blocking effect of ECR-SiO/sub 2/

Abstract

The effect of water and/or silanols in TEOS/O/sub 3/-oxide on hot-carrier degradation is discussed. Hot-carrier degradation in MOSFETs is a serious problem as the thickness of the TEOS/O/sub 3/-oxide interlayer dielectric increases. This results mainly from enhanced hot-electron trapping and also from interface-trap generation, which are related to water and/or silanols in TEOS/O/sub 3/-oxide diffusing into the gate oxide. It is pointed out that by applying an ECR (electron cyclotron resonance) SiO/sub 2/ layer under the TEOS/O/sub 3/-oxide layer, tolerance against hot-carrier damage is improved to the level of MOSFETs without the TEOS/O/sub 3/-oxide layer.<>