Predicted electrical characteristics of 4500 V super multi-RESURF MOSFETs

Abstract

In this paper, we show the optimized device parameters for various voltage multi-RESURF devices based on exact simulation. In addition, we also present, for the first time, the exact static and transient simulation of a 4500 V multi-RESURF device. The distinguishing feature of the multi-RESURF MOSFET is that a storage time exists and that the fall time is extremely small. The multi-RESURF MOSFET was found to be an ideal device for high voltage applications, superior to IGBTs.