Latching in N-channel, high-voltage hybrid SINFET's

Abstract

The latching characteristics of 500V, n-channel HSINFET's are measured and compared to lateral IGBT's with and without collector shorts. In particular, the effect of substrate resistivity, Schottky region length in the collector and emitter shorts on latching suppression are studied. Also, latching or maximum gate controlled current at elevated temperatures up to 150 C is measured. While the HSINFET's are superior to the corresponding collector-shorted LIGBT's in latching, but inferior to the LIGBT's without collector shorts.