M. D. Carvalho, Maurício Altieri, L. Puricelli, Renato P. Butzen, R. Ribas, E. Fabris
{"title":"On-silicon validation of a benchmark generation methodology for effectively evaluating combinational cell library design","authors":"M. D. Carvalho, Maurício Altieri, L. Puricelli, Renato P. Butzen, R. Ribas, E. Fabris","doi":"10.1109/LATW.2016.7483353","DOIUrl":null,"url":null,"abstract":"This work presents the validation in silicon of a test chip for the evaluation of ensembles of combinational CMOS gates (cell library). The design methodology and the architecture of this simple, efficient and easy-to-use test circuit were already proposed theoretically in the past, having been demonstrated its functionality only through partial electrical simulations. The fabrication and measurements over on-silicon prototype provide important information about design improvement possibilities of such a test circuit and its architecture. The results are presented and discussed in this paper.","PeriodicalId":135851,"journal":{"name":"2016 17th Latin-American Test Symposium (LATS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th Latin-American Test Symposium (LATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2016.7483353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This work presents the validation in silicon of a test chip for the evaluation of ensembles of combinational CMOS gates (cell library). The design methodology and the architecture of this simple, efficient and easy-to-use test circuit were already proposed theoretically in the past, having been demonstrated its functionality only through partial electrical simulations. The fabrication and measurements over on-silicon prototype provide important information about design improvement possibilities of such a test circuit and its architecture. The results are presented and discussed in this paper.