Electronics Failure Analysis Demonstrations using a Quantum Diamond Microscope

P. Kehayias, E. Levine, A. Rodarte, J. Walraven, A. Mounce
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Abstract

One approach for finding faults in integrated circuits (ICs) is magnetic imaging, where we map the magnetic fields emitted by internal currents in the device and use this knowledge to infer the current paths and fault locations. This gives us access to information about the IC internal properties without needing voltage probes, as the magnetic fields are unimpeded by opaque insulating and conducting layers. Magnetic imaging benefits from optimizing the spatial resolution and minimizing the standoff distance between the magnetic sensor and the circuit, motivating new experimental approaches that excel at these attributes. In this work, we apply the quantum diamond microscope (QDM) instrument to example failure analysis situations, building on our previous work using the QDM to interrogate the internal states of commercial ICs to achieve micrometer-scale spatial resolution and standoff distance.
电子故障分析演示使用量子金刚石显微镜
在集成电路(ic)中发现故障的一种方法是磁成像,我们绘制由器件内部电流发出的磁场,并利用这些知识推断电流路径和故障位置。这使我们能够在不需要电压探头的情况下访问有关IC内部特性的信息,因为磁场不受不透明绝缘和导电层的阻碍。磁成像从优化空间分辨率和最小化磁传感器与电路之间的距离中获益,激发了擅长这些属性的新实验方法。在这项工作中,我们将量子金刚石显微镜(QDM)仪器应用于故障分析情况的示例,建立在我们之前的工作基础上,使用QDM来询问商业ic的内部状态,以实现微米尺度的空间分辨率和距离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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