Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628115

G. Dash, J. Pradhan, S. K. Swain, S. R. Pattanaik

引用次数: 1

Abstract

The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.

查看原文本刊更多论文

利用优化掺杂步骤实现高效率4H-SiC IMPATT二极管

电场和雪崩区的宽度是决定IMPATT二极管性能的关键因素。为了优化这一特性，在雪崩区引入了一种新的掺杂模式，并探讨了其对4H-SiC IMPATT二极管太赫兹特性的影响。令人兴奋的是，通过提出的掺杂步骤，IMPAT T二极管的转换效率达到了17.24%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

自引率

0.00%

发文量