Modeling of FET Switches

Abstract

This paper describes the salient features of modeling FET devices for switch applications, with examples in GaAs PHEMT and GaN HEMT technologies. It explains the subtle differences that differentiate these models from PA models and what is required to accurately describe their small- and large- signal behavior. In that respect, suggestions are made on how to approach formulation of critical parameters in meeting unique requirements of modeling high-power switches with novel device structures.