A 60 GHz InGaP/GaAs HBT push-push MMIC VCO

Abstract

A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.