Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology

Abstract

4 Gb DRAM has been developed successfully using 0.11 /spl mu/m DRAM technology. Considering manufacturability, we have focused on developing patterning technology that makes 0.11 /spl mu/m design rules possible using KrF lithography. Also, novel DRAM technologies, which have a big influence on the future DRAM integration, are developed as follows:, using novel oxide (SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.