245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

Abstract

Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization.