Cu wire bonding knows no limit - 28 nm is qualified

B. Appelt, A. Tseng, S. Uegaki, L. Huang
{"title":"Cu wire bonding knows no limit - 28 nm is qualified","authors":"B. Appelt, A. Tseng, S. Uegaki, L. Huang","doi":"10.1109/ICSJ.2012.6523390","DOIUrl":null,"url":null,"abstract":"Over the course of the last five years, fine pitch Cu wire bonding has gained a very large market share in the wire bond packaging market driven primarily by very high Au commodity prices. Virtually all IDMs and OSATs do offer Cu wire bond products. In ASE the penetration rate is reaching 60% or more than 9.5 billion units in shipment to date. The reliability has reached levels which equate to more than 6X of typical JEDEC package reliability testing protocols, and now, automotive as well as networking customers are ready to accept Cu wire bonded products for their applications. Current shipments do include 40 and 45 nm wafer technology and the question is arising how far can Cu wire bonding go? The ASE Cu wire bonding roadmap will be presented which aims at sustaining wire bonding in Cu to at least the 20 nm node. Qualification data will be presented for the 28 nm node based on collaboration with wafer fabs. Customer die qualifications are in progress.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"4 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 2nd IEEE CPMT Symposium Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2012.6523390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Over the course of the last five years, fine pitch Cu wire bonding has gained a very large market share in the wire bond packaging market driven primarily by very high Au commodity prices. Virtually all IDMs and OSATs do offer Cu wire bond products. In ASE the penetration rate is reaching 60% or more than 9.5 billion units in shipment to date. The reliability has reached levels which equate to more than 6X of typical JEDEC package reliability testing protocols, and now, automotive as well as networking customers are ready to accept Cu wire bonded products for their applications. Current shipments do include 40 and 45 nm wafer technology and the question is arising how far can Cu wire bonding go? The ASE Cu wire bonding roadmap will be presented which aims at sustaining wire bonding in Cu to at least the 20 nm node. Qualification data will be presented for the 28 nm node based on collaboration with wafer fabs. Customer die qualifications are in progress.
铜线键合没有限制,28nm是合格的
在过去的五年中,细间距铜线键合在线键合包装市场上获得了非常大的市场份额,主要是由非常高的Au商品价格驱动的。几乎所有的idm和osat都提供铜丝焊产品。在日月光,渗透率达到60%,到目前为止出货量超过95亿部。可靠性已经达到了相当于典型JEDEC封装可靠性测试协议的6倍以上的水平,现在,汽车和网络客户已经准备好接受用于其应用的铜线键合产品。目前的出货量确实包括40和45纳米晶圆技术,问题是铜线键合能走多远?ASE的铜线键合路线图将提出,其目标是将铜线键合至少维持到20nm节点。基于与晶圆厂的合作,将提供28纳米节点的认证数据。客户模具认证正在进行中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信