Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida
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引用次数: 3

Abstract

This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.
用于便携式设备的低功耗、低电压CMOS超宽带低噪声放大器
本文介绍了一种超宽带低噪声放大器的设计。提出的UWB LNA采用配置为当前复用拓扑的公共门级和公共源级。UWB LNA的最大增益为14 dB,最小NF为3.0 dB。在工作频带内实现了良好的输入和输出阻抗匹配。所提出的UWB LNA在0.9V电源下仅消耗2.0 mW。该超宽带LNA采用标准的0.18 μm CMOS技术进行设计和仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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