Milliamp-class field emission devices based on free-standing, two-dimensional carbon nanostructures

Abstract

Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.