Gate-induced vs. implanted body doping impact on Z2-FET DC operation

Abstract

The impact of the gate-induced virtual and body implanted doping on the DC Z2-FET operation is analyzed under several gate-biasing scenarios. Results are compared with related architectures such as the Shockley and P-I-N diodes or the current-gate thyristor. Gate biasing turns out to be essential to observe the characteristic sharp switch of Z2-FET device.